WSD30140DN56 N-channel 30V 85A DFN5*6-8 WINSOK MOSFET

Maikling Paglalarawan:

Numero ng Modelo:WSD30140DN56

BVDSS:30V

RDSON:1.7mΩ

ID:85A

Channel:N-channel

Package:DFN5*6-8

Summery ng Produkto:Ang boltahe ng WSD30140DN56 MOSFET ay 30V, ang kasalukuyang ay 85A, ang resistensya ay 1.7mΩ, ang channel ay N-channel, at ang package ay DFN5*6-8.

Mga Application:Mga elektronikong sigarilyo, wireless charger, drone, pangangalagang medikal, charger ng kotse, controller, digital na produkto, maliliit na appliances, consumer electronics, atbp.

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Detalye ng Produkto

Aplikasyon

Mga Tag ng Produkto

Pangkalahatang paglalarawan

Ang WSD30140DN56 ay ang pinakamataas na performance trench N-channel MOSFET na may napakataas na cell density na nagbibigay ng mahusay na RDSON at gate charge para sa karamihan ng mga kasabay na buck converter application.Sumusunod ang WSD30140DN56 sa mga kinakailangan ng RoHS at berdeng produkto, 100% na garantiya ng EAS, naaprubahan ang buong pagiging maaasahan ng function.

Mga tampok

Advanced na high cell density Trench technology, ultra-low gate charge, mahusay na CdV/dt effect attenuation, 100% EAS na garantiya, mga green na device

Mga aplikasyon

High-frequency point-of-load synchronization, buck converter, networked DC-DC power system, electric tool applications, electronic cigarettes, wireless charging, drones, medical care, car charging, controllers, digital products, small appliances, consumer electronics

kaukulang numero ng materyal

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314.SA NTMFS4847N.VISHAY SiRA62DP.ST STL86N3LLH6AG.INFINEON BSC050N03MSG.TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A.NXP PH2520U.TOSHIBA TPH4R803PL TPH3R203NL.ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN.PANJIT PJQ5410.AP AP3D5R0MT.NIKO PK610SA, PK510BA.POTENS PDC3803R

Mahalagang mga parameter

Simbolo	Parameter	Marka	Mga yunit
VDS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Tuloy-tuloy na Drain Current, VGS @ 10V1,7	85	A
ID@TC=70℃	Tuloy-tuloy na Drain Current, VGS @ 10V1,7	65	A
IDM	Pulsed Drain Current2	300	A
PD@TC=25℃	Kabuuang Pagkawala ng Power4	50	W
TSTG	Saklaw ng Temperatura ng Imbakan	-55 hanggang 150	℃
TJ	Saklaw ng Temperatura ng Operating Junction	-55 hanggang 150	℃

Simbolo	Parameter	Mga kundisyon	Min.	Typ.	Max.	Yunit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Sanggunian sa 25℃, ID=1mA	---	0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=15A		2.5	3.3	mΩ
VGS(ika)	Gate Threshold Boltahe	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
mga gfs	Pasulong na Transconductance	VDS=5V , ID=20A	---	90	---	S
Qg	Kabuuang Gate Charge (4.5V)	VDS=15V , VGS=4.5V , ID=20A	---	26	---	nC
Qgs	Gate-Source Charge		---	9.5	---
Qgd	Gate-Drain Charge		---	11.4	---
Td(on)	Oras ng Pagkaantala sa Pag-on	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Rise Time		---	6	---
Td(off)	Oras ng Pagkaantala ng Turn-Off		---	38.5	---
Tf	Tag lagas		---	10	---
Ciss	Kapasidad ng Input	VDS=15V , VGS=0V , f=1MHz	---	3000	---	pF
Coss	Kapasidad ng Output		---	1280	---
Crss	Reverse Transfer Capacitance		---	160	---