WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD30160DN56 MOSFET ay 30V, ang kasalukuyang ay 120A, ang resistensya ay 1.9mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
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Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
Mga parameter ng MOSFET
| Simbolo | Parameter | Marka | Mga yunit |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Boltahe | ±20 | V |
| ID@TC=25℃ | Patuloy na Agos ng Drain, VGS@ 10V1,7 | 120 | A |
| ID@TC=100℃ | Patuloy na Agos ng Drain, VGS@ 10V1,7 | 68 | A |
| IDM | Pulsed Drain Current2 | 300 | A |
| EAS | Single Pulse Avalanche Energy3 | 128 | mJ |
| IAS | Kasalukuyang Avalanche | 50 | A |
| PD@TC=25℃ | Kabuuang Power Dissipation4 | 62.5 | W |
| TSTG | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | ℃ |
| TJ | Saklaw ng Temperatura ng Operating Junction | -55 hanggang 150 | ℃ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , akoD=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperatura Coefficient | Sanggunian sa 25℃, akoD=1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 1.9 | 2.5 | mΩ |
| VGS=4.5V , ID=15A | --- | 2.9 | 3.5 | |||
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS, akoD=250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Temperatura Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=5V , ID=10A | --- | 32 | --- | S |
| Rg | Paglaban sa Gate | VDS=0V , VGS=0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Kabuuang Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A | --- | 38 | --- | nC |
| Qgs | Gate-Source Charge | --- | 10 | --- | ||
| Qgd | Gate-Drain Charge | --- | 13 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=15V , VGEN=10V , RG=6Ω, akoD=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 23 | --- | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 95 | --- | ||
| Tf | Tag lagas | --- | 40 | --- | ||
| Ciss | Kapasidad ng Input | VDS=15V , VGS=0V , f=1MHz | --- | 4900 | --- | pF |
| Coss | Kapasidad ng Output | --- | 1180 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 530 | --- |
