WSD3023DN56 N-Ch at P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

Maikling Paglalarawan:

Numero ng Modelo:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Channel:N-Ch at P-Channel

Package:DFN5*6-8

Summery ng Produkto:Ang boltahe ng WSD3023DN56 MOSFET ay 30V/-30V, ang kasalukuyang ay14A/-12A, ang resistensya ay 14mΩ/23mΩ, ang channel ay N-Ch at P-Channel, at ang package ay DFN5*6-8.

Mga Application:Mga drone, motor, automotive electronics, pangunahing appliances.

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Detalye ng Produkto

Aplikasyon

Mga Tag ng Produkto

Pangkalahatang paglalarawan

Ang WSD3023DN56 ay ang pinakamataas na pagganap ng trench na N-ch at P-ch MOSFET na may matinding mataas na densidad ng cell, na nagbibigay ng mahusay na RDSON at gate charge para sa karamihan ng mga synchronous buck converter application.Ang WSD3023DN56 ay nakakatugon sa RoHS at Green Product na kinakailangan na 100% EAS na garantisadong may ganap na pagiging maaasahan ng paggana na naaprubahan.

Mga tampok

Advanced na high cell density Trench technology , Super Low Gate Charge , Napakahusay na CdV/dt effect decline ,100% EAS Guaranteed , Green Device Available.

Mga aplikasyon

High Frequency Point-of-Load Synchronous Buck Converter para sa MB/NB/UMPC/VGA, Networking DC-DC Power System, CCFL Back-light Inverter, Drone, motor, automotive electronics, pangunahing appliances.

kaukulang numero ng materyal

PANJIT PJQ5606

Mahalagang mga parameter

Simbolo	Parameter	Marka		Mga yunit
Simbolo	Parameter	N-Ch	P-Ch	Mga yunit
VDS	Drain-Source Voltage	30	-30	V
VGS	Gate-Source Voltage	±20	±20	V
ID	Tuloy-tuloy na Drain Current, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Continuous Drain Current, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Sinubukan ang Kasalukuyang Pulse Drain, VGS(NP)=10V	48	-48	A
EAS c	Avalanche Energy, Single pulse , L=0.5mH	20	20	mJ
IAS c	Avalanche Current, Single pulse , L=0.5mH	9	-9	A
PD	Kabuuang Power Dissipation, Ta=25℃	5.25	5.25	W
TSTG	Saklaw ng Temperatura ng Imbakan	-55 hanggang 175	-55 hanggang 175	℃
TJ	Saklaw ng Temperatura ng Operating Junction	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient,Steady State	60	60	℃/W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃/W

Simbolo	Parameter	Mga kundisyon	Min.	Typ.	Max.	Yunit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source On-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source On-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(ika)	Gate Threshold Boltahe	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Paglaban sa Gate	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Kabuuang Gate Charge	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Source Charge		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(on)e	Oras ng Pagkaantala sa Pag-on	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Rise Time		---	8.6	---
Td(off)e	Oras ng Pagkaantala ng Turn-Off		---	16	---
Tfe	Tag lagas		---	3.6	---
Cisse	Kapasidad ng Input	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Cosse	Kapasidad ng Output		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---