WSD40190DN56G N-channel 40V 190A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD40120DN56G MOSFET ay 40V, ang kasalukuyang ay 120A, ang resistensya ay 1.4mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
E-cigarettes MOSFET, wireless charging MOSFET, drone MOSFET, medical care MOSFET, car charger MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
Mga parameter ng MOSFET
| Simbolo | Parameter | Rating | Mga yunit |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Boltahe | ±20 | V |
| ID@TC=25℃ | Patuloy na Agos ng Drain, VGS@ 10V1 | 120 | A |
| ID@TC=100℃ | Patuloy na Agos ng Drain, VGS@ 10V1 | 82 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Single Pulse Avalanche Energy3 | 400 | mJ |
| IAS | Kasalukuyang Avalanche | 40 | A |
| PD@TC=25℃ | Kabuuang Power Dissipation4 | 125 | W |
| TSTG | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | ℃ |
| TJ | Saklaw ng Temperatura ng Operating Junction | -55 hanggang 150 | ℃ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , akoD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperatura Coefficient | Sanggunian sa 25℃, akoD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 1.4 | 1.8 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.0 | 2.6 | mΩ |
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS, akoD=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(th) | VGS(th)Temperatura Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=5V , ID=20A | --- | 53 | --- | S |
| Rg | Paglaban sa Gate | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Kabuuang Gate Charge (10V) | VDS=15V , VGS=10V , ID=20A | --- | 45 | --- | nC |
| Qgs | Gate-Source Charge | --- | 12 | --- | ||
| Qgd | Gate-Drain Charge | --- | 18.5 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=15V , VGEN=10V , RG=3.3Ω, akoD=20A ,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Oras ng Pagbangon | --- | 9 | --- | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 58.5 | --- | ||
| Tf | Panahon ng Taglagas | --- | 32 | --- | ||
| Ciss | Kapasidad ng Input | VDS=20V , VGS=0V , f=1MHz | --- | 3972 | --- | pF |
| Coss | Kapasidad ng Output | --- | 1119 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 82 | --- |
