WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD4080DN56 MOSFET ay 40V, ang kasalukuyang ay 85A, ang resistensya ay 4.5mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
Maliit na appliances MOSFET, handheld appliances MOSFET, motor MOSFET.
Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
Mga parameter ng MOSFET
| Simbolo | Parameter | Marka | Mga yunit |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Boltahe | ±20 | V |
| ID@TC=25℃ | Patuloy na Agos ng Drain, VGS @ 10V1 | 85 | A |
| ID@TC=100 ℃ | Patuloy na Agos ng Drain, VGS @ 10V1 | 58 | A |
| IDM | Pulsed Drain Current2 | 100 | A |
| EAS | Single Pulse Avalanche Energy3 | 110.5 | mJ |
| IAS | Kasalukuyang Avalanche | 47 | A |
| PD@TC=25℃ | Kabuuang Power Dissipation4 | 52.1 | W |
| TSTG | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | ℃ |
| TJ | Saklaw ng Temperatura ng Operating Junction | -55 hanggang 150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambient1 | 62 | ℃/W |
| RθJC | Thermal Resistance Junction-Case1 | 2.4 | ℃/W |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=10V , ID=5A | --- | 27 | --- | S |
| Qg | Kabuuang Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.8 | --- | ||
| Qgd | Gate-Drain Charge | --- | 9.5 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=15V , VGS=10V RG=3.3Ω ID=1A | --- | 15.2 | --- | ns |
| Tr | Rise Time | --- | 8.8 | --- | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 74 | --- | ||
| Tf | Tag lagas | --- | 7 | --- | ||
| Ciss | Kapasidad ng Input | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
| Coss | Kapasidad ng Output | --- | 215 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Patuloy na Pinagmulan ng Kasalukuyang1,5 | VG=VD=0V , Force Current | --- | --- | 70 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
