WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD75100DN56 MOSFET ay 75V, ang kasalukuyang ay 100A, ang resistensya ay 5.3mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
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Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3NEG7NSFET X.
Mga parameter ng MOSFET
| Simbolo | Parameter | Rating | Mga yunit |
| VDS | Drain-Source Voltage | 75 | V |
| VGS | Gate-Source Boltahe | ±25 | V |
| TJ | Pinakamataas na Temperatura ng Junction | 150 | °C |
| ID | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | °C |
| IS | Diode Continuous Forward Current,TC=25°C | 50 | A |
| ID | Patuloy na Agos ng Drain, VGS=10V,TC=25°C | 100 | A |
| Patuloy na Agos ng Drain, VGS=10V,TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current ,TC=25°C | 400 | A |
| PD | Maximum Power Dissipation,TC=25°C | 155 | W |
| Maximum Power Dissipation,TC=100°C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 20 | °C |
| Thermal Resistance-Junction to Ambient ,Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , akoD=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperatura Coefficient | Sanggunian sa 25℃, akoD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS, akoD=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperatura Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=5V , ID=20A | --- | 50 | --- | S |
| Rg | Paglaban sa Gate | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Kabuuang Gate Charge (10V) | VDS=20V , VGS=10V , ID=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=30V , VGEN=10V , RG=1Ω, akoD=1A ,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Oras ng Pagbangon | --- | 14 | 26 | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 60 | 108 | ||
| Tf | Panahon ng Taglagas | --- | 37 | 67 | ||
| Ciss | Kapasidad ng Input | VDS=20V , VGS=0V , f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Kapasidad ng Output | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
