WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD75100DN56 MOSFET ay 75V, ang kasalukuyang ay 100A, ang resistensya ay 5.3mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
E-cigarettes MOSFET, wireless charging MOSFET, drone MOSFET, medical care MOSFET, car charger MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3NEG7NSFET. .
Mga parameter ng MOSFET
| Simbolo | Parameter | Marka | Mga yunit |
| VDS | Drain-Source Voltage | 75 | V |
| VGS | Gate-Source Boltahe | ±25 | V |
| TJ | Pinakamataas na Temperatura ng Junction | 150 | °C |
| ID | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | °C |
| IS | Diode Continuous Forward Current,TC=25°C | 50 | A |
| ID | Patuloy na Agos ng Drain, VGS=10V,TC=25°C | 100 | A |
| Patuloy na Agos ng Drain, VGS=10V,TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current ,TC=25°C | 400 | A |
| PD | Maximum Power Dissipation,TC=25°C | 155 | W |
| Maximum Power Dissipation,TC=100°C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 20 | °C |
| Thermal Resistance-Junction to Ambient ,Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , akoD=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperatura Coefficient | Sanggunian sa 25℃, akoD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS, akoD=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperatura Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=5V , ID=20A | --- | 50 | --- | S |
| Rg | Paglaban sa Gate | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Kabuuang Gate Charge (10V) | VDS=20V , VGS=10V , ID=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=30V , VGEN=10V , RG=1Ω, akoD=1A ,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Rise Time | --- | 14 | 26 | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 60 | 108 | ||
| Tf | Tag lagas | --- | 37 | 67 | ||
| Ciss | Kapasidad ng Input | VDS=20V , VGS=0V , f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Kapasidad ng Output | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
