WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET
Pangkalahatang-ideya ng produkto ng WINSOK MOSFET
Ang boltahe ng WSD80120DN56 MOSFET ay 85V, ang kasalukuyang ay 120A, ang resistensya ay 3.7mΩ, ang channel ay N-channel, at ang package ay DFN5X6-8.
Mga lugar ng aplikasyon ng WINSOK MOSFET
Medikal na boltahe MOSFET, photographic equipment MOSFET, drone MOSFET, pang-industriya na kontrol MOSFET, 5G MOSFET, automotive electronics MOSFET.
Ang WINSOK MOSFET ay tumutugma sa iba pang mga numero ng materyal ng tatak
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
Mga parameter ng MOSFET
| Simbolo | Parameter | Marka | Mga yunit |
| VDS | Drain-Source Voltage | 85 | V |
| VGS | Gate-Source Boltahe | ±25 | V |
| ID@TC=25℃ | Patuloy na Agos ng Drain, VGS@ 10V | 120 | A |
| ID@TC=100℃ | Patuloy na Agos ng Drain, VGS@ 10V | 96 | A |
| IDM | Pulsed Drain Current..TC=25°C | 384 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 320 | mJ |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 180 | A |
| PD@TC=25℃ | Kabuuang Power Dissipation | 104 | W |
| PD@TC=100℃ | Kabuuang Power Dissipation | 53 | W |
| TSTG | Saklaw ng Temperatura ng Imbakan | -55 hanggang 175 | ℃ |
| TJ | Saklaw ng Temperatura ng Operating Junction | 175 | ℃ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , akoD=250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperatura Coefficient | Sanggunian sa 25℃, akoD=1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V,ID=50A | --- | 3.7 | 4.8 | mΩ |
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS, akoD=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperatura Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Paglaban sa Gate | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Kabuuang Gate Charge (10V) | VDS=50V , VGS=10V , ID=10A | --- | 54 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=50V , VGS=10V , RG=1Ω,RL=1Ω,ID=10A. | --- | 21 | --- | ns |
| Tr | Rise Time | --- | 18 | --- | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 36 | --- | ||
| Tf | Tag lagas | --- | 10 | --- | ||
| Ciss | Kapasidad ng Input | VDS=40V , VGS=0V , f=1MHz | --- | 3750 | --- | pF |
| Coss | Kapasidad ng Output | --- | 395 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 180 | --- |
