WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
Pangkalahatang Paglalarawan
Ang WSF4022 ay ang pinakamataas na performance trench Dual N-Ch MOSFET na may matinding mataas na cell density, na nagbibigay ng mahusay na RDSON at gate charge para sa karamihan ng mga kasabay na buck converter application. Ang WSF4022 ay nakakatugon sa RoHS at Green Product na kinakailangan 100% EAS na garantisadong may ganap na pag-andar naaprubahan ang pagiging maaasahan.
Mga tampok
Para sa Fan Pre-driver H-Bridge, Motor Control, Synchronous Rectification, E-cigarettes, wireless charging, motor, emergency power supply, drone, pangangalagang medikal, car charger, controller, digital na produkto, maliliit na gamit sa bahay, consumer electronics.
Mga aplikasyon
Para sa Fan Pre-driver H-Bridge, Motor Control, Synchronous Rectification, E-cigarettes, wireless charging, motor, emergency power supply, drone, pangangalagang medikal, car charger, controller, digital na produkto, maliliit na gamit sa bahay, consumer electronics.
kaukulang numero ng materyal
AOS
Mahalagang mga parameter
| Simbolo | Parameter | Rating | Mga yunit | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current (Patuloy) *AC | TC=25°C | 20* | A |
| ID | Drain Current (Patuloy) *AC | TC=100°C | 20* | A |
| ID | Drain Current (Patuloy) *AC | TA=25°C | 12.2 | A |
| ID | Drain Current (Patuloy) *AC | TA=70°C | 10.2 | A |
| IDMa | Pulsed Drain Current | TC=25°C | 80* | A |
| EASb | Single Pulse Avalanche Energy | L=0.5mH | 25 | mJ |
| IAS b | Kasalukuyang Avalanche | L=0.5mH | 17.8 | A |
| PD | Maximum Power Dissipation | TC=25°C | 39.4 | W |
| PD | Maximum Power Dissipation | TC=100°C | 19.7 | W |
| PD | Pagkawala ng kapangyarihan | TA=25°C | 6.4 | W |
| PD | Pagkawala ng kapangyarihan | TA=70°C | 4.2 | W |
| TJ | Saklaw ng Temperatura ng Operating Junction | 175 | ℃ | |
| TSTG | Operating Temperature/ Storage Temperature | -55~175 | ℃ | |
| RθJA b | Thermal Resistance Junction-Ambient | Steady State c | 60 | ℃/W |
| RθJC | Thermal Resistance Junction sa Case | 3.8 | ℃/W |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| Static | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Gate Leakage Current | VGS = ±20V, VDS = 0V | ±100 | nA | ||
| VGS(ika) | Gate Threshold Boltahe | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(on) d | Drain-Source On-State Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Gate Chargee | ||||||
| Qg | Kabuuang Gate Charge | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Gate-Source Charge | 3.24 | nC | |||
| Qgd | Gate-Drain Charge | 2.75 | nC | |||
| Dynamice | ||||||
| Ciss | Kapasidad ng Input | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Kapasidad ng Output | 95 | pF | |||
| Crss | Reverse Transfer Capacitance | 60 | pF | |||
| td (naka-on) | I-on ang Oras ng Pagkaantala | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | I-on ang Rise Time | 6.9 | ns | |||
| td(off) | I-off ang Oras ng Pagkaantala | 22.4 | ns | |||
| tf | I-off ang Fall Time | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Voltage | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Kapasidad ng Input | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Kapasidad ng Output | 8.7 | nC | |||
