WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

maikling paglalarawan:

Numero ng Modelo:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Channel:N&P-Channel

Package:TO-252-4L

Summery ng Produkto:Ang WSF6012 MOSFET ay may boltahe na saklaw na 60V at -60V, kayang humawak ng mga alon hanggang 20A at -15A, may resistensyang 28mΩ at 75mΩ, nagtatampok ng parehong N&P-Channel, at nakabalot sa TO-252-4L.

Mga Application:Mga e-cigarette, wireless charger, motor, power backup, drone, healthcare, car charger, controller, electronics, appliances, at consumer goods.

Magpadala ng email sa amin PDF

Detalye ng Produkto

Aplikasyon

Mga Tag ng Produkto

Pangkalahatang Paglalarawan

Ang WSF6012 MOSFET ay isang high-performance na device na may mataas na disenyo ng cell density. Nagbibigay ito ng mahusay na RDSON at gate charge na angkop para sa karamihan ng mga synchronous buck converter application. Bukod pa rito, natutugunan nito ang mga kinakailangan ng RoHS at Green Product, at may kasamang 100% EAS na garantiya para sa ganap na paggana at pagiging maaasahan.

Mga tampok

Advanced na Trench Technology na may High Cell Density, Super Low Gate Charge, Napakahusay na Pagbawas ng CdV/dt Effect, 100% Garantiyang EAS, at Environmental-Friendly na Device Options.

Mga aplikasyon

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless charging, mga motor, emergency power supply, drone, healthcare, car charger, controller, digital device, maliliit na appliances sa bahay, at consumer electronics.

kaukulang numero ng materyal

AOS AOD603A,

Mahalagang mga parameter

Simbolo	Parameter	Rating		Mga yunit
Simbolo	Parameter	N-Channel	P-Channel	Mga yunit
VDS	Drain-Source Voltage	60	-60	V
VGS	Gate-Source Voltage	±20	±20	V
ID@TC=25℃	Tuloy-tuloy na Drain Current, VGS @ 10V1	20	-15	A
ID@TC=70℃	Tuloy-tuloy na Drain Current, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Single Pulse Avalanche Energy3	200	180	mJ
IAS	Kasalukuyang Avalanche	59	-50	A
PD@TC=25℃	Kabuuang Pagkawala ng Kapangyarihan4	34.7	34.7	W
TSTG	Saklaw ng Temperatura ng Imbakan	-55 hanggang 150	-55 hanggang 150	℃
TJ	Saklaw ng Temperatura ng Operating Junction	-55 hanggang 150	-55 hanggang 150	℃

Simbolo	Parameter	Mga kundisyon	Min.	Typ.	Max.	Yunit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Sanggunian sa 25℃ , ID=1mA	---	0.063	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	37	45	mΩ
VGS(ika)	Gate Threshold Boltahe	VGS=VDS , ID =250uA	1	---	2.5	V
△VGS(ika)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
mga gfs	Pasulong na Transconductance	VDS=5V , ID=8A	---	21	---	S
Rg	Paglaban sa Gate	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Kabuuang Gate Charge (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	Gate-Source Charge		---	3.5	---
Qgd	Gate-Drain Charge		---	6.3	---
Td(on)	Oras ng Pagkaantala sa Pag-on	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Oras ng Pagbangon		---	14.2	---
Td(off)	Oras ng Pagkaantala ng Turn-Off		---	24.6	---
Tf	Panahon ng Taglagas		---	4.6	---
Ciss	Kapasidad ng Input	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
Coss	Kapasidad ng Output		---	70	---
Crss	Reverse Transfer Capacitance		---	35	---