WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
Pangkalahatang paglalarawan
Ang WSP4099 ay isang malakas na trench na P-ch MOSFET na may mataas na density ng cell.Naghahatid ito ng mahusay na RDSON at gate charge, na ginagawa itong angkop para sa karamihan ng mga kasabay na aplikasyon ng buck converter.Nakakatugon ito sa mga pamantayan ng RoHS at GreenProduct at may 100% na garantiyang EAS na may ganap na pag-apruba sa pagiging maaasahan ng paggana.
Mga tampok
Ang Advanced na Trench Technology na may mataas na cell density, napakababang gate charge, mahusay na CdV/dt effect decay at 100% EAS na garantiya ay lahat ng feature ng aming mga berdeng device na madaling makuha.
Mga aplikasyon
High Frequency Point-of-Load Synchronous Buck Converter para sa MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarette, wireless charging, motor, drone, pangangalagang medikal, charger ng kotse, controller, digital na produkto , maliliit na kasangkapan sa bahay, at consumer electronics.
kaukulang numero ng materyal
ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807 ,ruichips RU40S4H.
Mahalagang mga parameter
| Simbolo | Parameter | Marka | Mga yunit |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Tuloy-tuloy na Drain Current, -VGS @ -10V1 | -6.5 | A |
| ID@TC=100℃ | Tuloy-tuloy na Drain Current, -VGS @ -10V1 | -4.5 | A |
| IDM | Pulsed Drain Current2 | -22 | A |
| EAS | Single Pulse Avalanche Energy3 | 25 | mJ |
| IAS | Kasalukuyang Avalanche | -10 | A |
| PD@TC=25℃ | Kabuuang Pagkawala ng Power4 | 2.0 | W |
| TSTG | Saklaw ng Temperatura ng Imbakan | -55 hanggang 150 | ℃ |
| TJ | Saklaw ng Temperatura ng Operating Junction | -55 hanggang 150 | ℃ |
| Simbolo | Parameter | Mga kundisyon | Min. | Typ. | Max. | Yunit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Sanggunian sa 25℃ , ID=-1mA | --- | -0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V , ID=-4.5A | --- | 46 | 62 | |||
| VGS(ika) | Gate Threshold Boltahe | VGS=VDS , ID =-250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS(ika) | VGS(th) Temperature Coefficient | --- | 3.72 | --- | V/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| mga gfs | Pasulong na Transconductance | VDS=-5V , ID=-4A | --- | 8 | --- | S |
| Qg | Kabuuang Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.5 | --- | ||
| Td(on) | Oras ng Pagkaantala sa Pag-on | VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Rise Time | --- | 7 | --- | ||
| Td(off) | Oras ng Pagkaantala ng Turn-Off | --- | 31 | --- | ||
| Tf | Tag lagas | --- | 17 | --- | ||
| Ciss | Kapasidad ng Input | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
| Coss | Kapasidad ng Output | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 72 | --- |
