WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

Maikling Paglalarawan:

Numero ng Modelo:WSR200N08

BVDSS:80V

RDSON:2.9mΩ

ID:200A

Channel:N-channel

Package:TO-220-3L

Summery ng Produkto:Ang WSR200N08 MOSFET ay kayang humawak ng hanggang 80 volts at 200 amps na may resistensyang 2.9 milliohms.Ito ay isang aparatong N-channel at nasa isang TO-220-3L na pakete.

Mga Application:Mga elektronikong sigarilyo, wireless charger, motor, system ng pamamahala ng baterya, backup na pinagmumulan ng kuryente, unmanned aerial vehicle, healthcare device, electric vehicle charging equipment, control unit, 3D printing machine, electronic device, maliliit na appliances sa bahay, at consumer electronics.

Magpadala ng email sa amin PDF

Detalye ng Produkto

Aplikasyon

Mga Tag ng Produkto

Pangkalahatang paglalarawan

Ang WSR200N08 ay ang pinakamataas na pagganap ng trench na N-Ch MOSFET na may matinding mataas na densidad ng cell, na nagbibigay ng mahusay na RDSON at gate charge para sa karamihan ng mga synchronous buck converter application.Ang WSR200N08 ay nakakatugon sa RoHS at Green Product na kinakailangan, 100% EAS na garantisadong may ganap na pagiging maaasahan ng pag-andar na naaprubahan.

Mga tampok

Advanced na high cell density Trench technology, Super Low Gate Charge, Napakahusay na pagbaba ng epekto ng CdV/dt, 100% Garantisadong EAS, Available ang Green Device.

Mga aplikasyon

Switching application, Power Management para sa Inverter System, Electronic cigarettes, wireless charging, motors, BMS, emergency power supply, drones, medical, car charging, controllers, 3D printers, digital products, maliliit na gamit sa bahay, consumer electronics, atbp.

kaukulang numero ng materyal

AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, atbp.

Mahalagang mga parameter

Mga Katangian ng Elektrisidad (TJ=25℃, maliban kung iba ang nabanggit)

Simbolo	Parameter	Marka	Mga yunit
VDS	Drain-Source Voltage	80	V
VGS	Gate-Source Voltage	±25	V
ID@TC=25℃	Tuloy-tuloy na Drain Current, VGS @ 10V1	200	A
ID@TC=100℃	Tuloy-tuloy na Drain Current, VGS @ 10V1	144	A
IDM	Pulsed Drain Current2,TC=25°C	790	A
EAS	Avalanche Energy, Single pulse, L=0.5mH	1496	mJ
IAS	Avalanche Current, Single pulse, L=0.5mH	200	A
PD@TC=25℃	Kabuuang Pagkawala ng Power4	345	W
PD@TC=100℃	Kabuuang Pagkawala ng Power4	173	W
TSTG	Saklaw ng Temperatura ng Imbakan	-55 hanggang 175	℃
TJ	Saklaw ng Temperatura ng Operating Junction	175	℃

Simbolo	Parameter	Mga kundisyon	Min.	Typ.	Max.	Yunit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Sanggunian sa 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS(ika)	Gate Threshold Boltahe	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(ika)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Paglaban sa Gate	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Kabuuang Gate Charge (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	Gate-Source Charge		---	31	---
Qgd	Gate-Drain Charge		---	75	---
Td(on)	Oras ng Pagkaantala sa Pag-on	VDD=50V , VGS=10V , RG=3Ω, ID=30A	---	28	---	ns
Tr	Rise Time		---	18	---
Td(off)	Oras ng Pagkaantala ng Turn-Off		---	42	---
Tf	Tag lagas		---	54	---
Ciss	Kapasidad ng Input	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
Coss	Kapasidad ng Output		---	1029	---
Crss	Reverse Transfer Capacitance		---	650	---